Skip navigation
Por favor, use este identificador para citar o enlazar este ítem: http://repositorio.unb.br/handle/10482/41109
Ficheros en este ítem:
No hay ficheros asociados a este ítem.
Título : On the electronic structure of a recently synthesized graphene-like BCN monolayer from bis-BN cyclohexane with single-atom vacancies : a DFT study
Autor : Santos, Ramiro Marcelo dos
Giozza, William Ferreira
Sousa Júnior, Rafael Timóteo de
Silva Filho, Demétrio Antônio da
Ribeiro Júnior, Luiz Antônio
metadata.dc.identifier.orcid: https://orcid.org/0000-0002-3003-3458
https://orcid.org/0000-0003-1101-3029
https://orcid.org/0000-0002-7103-4780
https://orcid.org/0000-0001-7468-2946
Assunto:: Carbono
Nitreto de boro
Fecha de publicación : 9-abr-2021
Editorial : IOP Publishing Ltd
Citación : SANTOS, Ramiro M. dos et al. On the electronic structure of a recently synthesized graphene-like BCN monolayer from bis-BN cyclohexane with single-atom vacancies: a DFT study. Electronic Structure, v. 3, n. 1, 2021.
Abstract: Since the rising of graphene, boron nitride monolayers have been deeply studied due to their structural similarity with the former. A hexagonal graphene-like boron–carbon–nitrogen (h-BCN) monolayer was synthesized recently using bis-BN cyclohexane (B2N2C2H12) as a precursor molecule. Herein, we investigated the electronic and structural properties of this novel BCN material, in the presence of single-atom (boron, carbon, or nitrogen) vacancies, by employing density functional theory calculations. The stability of these vacancy-endowed structures is verified from cohesion energy calculations. Results showed that a carbon atom vacancy strongly distorts the lattice leading to breaking on its planarity and bond reconstructions. The single-atom vacancies induce the appearance of flat midgap states. A significant degree of charge localization takes place in the vicinity of these defects. It was observed a spontaneous magnetization only for the boron-vacancy case, with a magnetic dipole moment about 0.87 μB.Our calculations predicted a direct electronic bandgap value of about 1.14 eV. Importantly, this bandgap value is intermediate between gapless graphene and insulating hexagonal boron nitride.
metadata.dc.relation.publisherversion: https://iopscience.iop.org/article/10.1088/2516-1075/abef57
Aparece en las colecciones: Artigos publicados em periódicos e afins

Mostrar el registro Dublin Core completo del ítem " class="statisticsLink btn btn-primary" href="/jspui/handle/10482/41109/statistics">



Los ítems de DSpace están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.