| Campo DC | Valor | Lengua/Idioma |
|---|
| dc.contributor.author | Diniz, G. S. | - |
| dc.contributor.author | Qu, Fanyao | - |
| dc.contributor.author | Diniz Neto, Omar de Oliveira | - |
| dc.contributor.author | Milla, Augusto Miguel Alcalde | - |
| dc.date.accessioned | 2010-12-15T16:04:47Z | - |
| dc.date.available | 2010-12-15T16:04:47Z | - |
| dc.date.issued | 2006-06 | - |
| dc.identifier.citation | DINIZ, G. S. et al. Electron-phonon scattering in graded quantum dots. Brazilian Journal of Physics, São Paulo, v. 36, n. 2a, p. 372-374, jun. 2006. Disponível em: <http://www.scielo.br/pdf/bjp/v36n2a/a37v362a.pdf>. Acesso em: 13 dez. 2010. doi: 10.1590/S0103-97332006000300037. | en |
| dc.identifier.uri | http://repositorio.unb.br/handle/10482/6175 | - |
| dc.description.abstract | Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs | en |
| dc.language.iso | Inglês | en |
| dc.rights | Acesso Aberto | en |
| dc.title | Electron-phonon scattering in graded quantum dots | en |
| dc.type | Artigo | en |
| dc.subject.keyword | Cálculo | en |
| dc.subject.keyword | Fóton | en |
| dc.subject.keyword | Elétrons | en |
| dc.identifier.doi | https://dx.doi.org/10.1590/S0103-97332006000300037 | en |
| Aparece en las colecciones: | Artigos publicados em periódicos e afins
|
