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Title: Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
Authors: Amato, Angélica Amorim
Issue Date: 2002
Publisher: Sociedade Brasileira de Física
Citation: Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002
Abstract: It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
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